page 1 npt2021 advanced rev. 0.b, may 2013 advanced datasheet g a ll i u m n i tr i d e 4 8 v , 50 w , dc - 2.2 ghz hemt built using the sigantic ? process - a proprietary gan - on - silicon technology dc - 2.2 ghz 50w gan hemt s ym b ol p a r am e t e r min t y p m a x u n i t s g ss sm al l - sig nal g ain - 17 - db p sat s a t u r a t e d o u tp ut p o w e r - 47.5 - d bm ? sat efficiency at s a t u r a t e d o u tp ut p o w e r - 60 - % g p g ain at p out = 50w - 15 - db ? drain e f f i c ie n c y at p out = 50w - 55 - % v ds drain voltage - 48 - v ? ruggedness: output mismatch, all phase angles vswr = tbd:1, no device damage rf s p ec i fi c a t ion s ( c w , 2.15 gh z ) : v ds = 4 8 v , i d q = 300 m a , t c = 2 5 c product description the npt2021 gan hemt is a wideband transistor optimized for dc - 2.2 ghz operation. this device has been designed for cw, pulsed, and linear operation with output power levels to 50w (47 dbm) in an industry standard plastic package with a bolt down flange. f eatures ? suitable for linear and saturated applications ? tunable f r o m dc - 2.2 g hz ? 48v operation ? industry standard package ? high drain efficiency (>60%) applications ? defense communications ? land mobile radio ? avionics ? wireless infrastructure ? ism applications ? vhf/uhf/l - band radar
page 2 npt2021 advanced rev. 0.b, may 2013 advanced datasheet s ym b ol p a r am e t e r min t y p m a x u n i t s off characteristics i dlk drain - source leakage current (v gs = - 8v, v ds =160v) - - 12 ma i glk gate - source leakage current (v gs = - 8v, v ds =0v) - - 6 ma on characteristics v t gate threshold voltage (v ds =48v, i d =12ma) - 2.5 - 1.5 - 0.5 v v gsq gate quiescent voltage (v ds =48v, i d =300ma) - 2.1 - 1.2 - 0.3 v r on on resistance (v ds =2v, i d =90ma) - 0.4 - ? i d, max maximum drain current (v ds =7v pulsed, 300s pulse width, 0.2% duty cycle) - 7 - a dc s p ec i fi c a t ion s : t c = 2 5 c thermal resistance specification: symbol parameter t yp units r ? jc the r m al r esi s t an c e ( j un c tio n - t o - case ) , t j = 20 0 c 1.9 c / w ab s ol ut e m a xi m u m r a t in g s : n ot s imul t a neo us, t c = 2 5 c un le s s o the r wis e n o t e d symbol parameter max units v ds d r ai n - so u r c e v o l t a g e 1 6 0 v v g s g a t e - so u r c e v o l t ag e - 1 0 to 3 v i g g a t e cu r re n t 24 ma p t t o t a l d e vi c e p o w e r d i s s ipa tio n ( d er a t e d a b ov e 2 5 c ) 105 w t s tg s t or a g e t emper a t u r e r a ng e - 6 5 to 1 5 0 c t j o per a t i n g j un c tio n t emper a t u r e 2 2 5 c hbm human body model esd rating (per jesd22 - a114) tbd msl moisture sensitivity level (per ipc/jedec j - std - 020) tbd junction temperature (t j ) measured using ir microscopy, case temperature (t c ) measured using a thermocouple embedded in heatsink.
page 3 npt2021 advanced rev. 0.b, may 2013 advanced datasheet f igur e 19 - to272 - 2 bolt - down plastic package dimensions (all dimensions in inches [millimeters]) function gate rf input drain rf output (cut lead) source ground (flange)
page 4 npt2021 advanced rev. 0.b, may 2013 advanced datasheet n i t r o n e x, llc 2 30 5 p reside n tia l d r i ve d u r h am, n c 2 7 7 0 3 us a + 1 . 9 1 9 . 8 0 7 . 9 1 0 0 ( t elephon e ) + 1 . 9 1 9 . 8 0 7 .92 0 0 ( f a x ) inf o @ ni t ron e x . c o m ww w .ni t ron e x . c om a d d i t iona l i n f o r ma t io n t h i s pa r t i s l ea d - f r e e an d i s c o m p l ian t wi t h th e r o h s dire ct i v e ( r e s tr i ct ion s o n th e use o f ce r t ai n h a z a r d o u s s u b s t an ce s i n e l e ctr i c a l an d e l e ct r oni c e q u i pm en t ). i m po r t an t no t i c e n i t ron e x, llc rese r v e s th e r ig h t to m a k e c o r re c tio ns, m o d i f i c a tio ns, e nhan c eme n t s, i mpr ov eme n t s a n d o the r c h a nge s to i t s pr o du ct s a n d se r vi c e s at a n y t i m e a n d to d is c o n t in u e a n y pr o du c t o r se r vi c e w i tho ut n o ti c e . cust ome r s s ho u l d o b t ain t h e la t e st rel ev a n t inf o r m a tio n b e f or e p la c i n g orde r s a n d s ho u l d v e r i f y t hat su c h inf o r m a tio n i s c u r re n t a n d c ompl et e . a ll pr o du ct s a r e sol d su bje c t to n i tron e x t e r m s a n d c on di tio ns of s a l e su pp l ie d at th e t i m e of orde r a ck n o w ledgme n t . th e la t e st inf o r m a t i o n f ro m n i tron e x c an b e f o u n d e i the r b y c a lli n g n i tron e x at 1 - 9 1 9 - 8 0 7 - 9 1 0 0 o r vis i t i n g o ur w ebs i t e at ww w .ni t ron e x . c o m. n i t ron e x w a r r a n t s pe r f o r m an c e of i t s pa c k age d semi c on du c t o r o r d i e to th e s pe c i f i c a tio ns a pp l i c a bl e at th e t i m e of sal e in a c c or dan c e w i t h n i tron e x s t a n da r d w a r r a n t y . t e s t i n g a n d o the r quali t y c o n tro l t e c hn i q ue s a r e u se d to th e e x t e n t n i t ron e x deem s ne c e s s a r y to su p- po r t th e w a r r a n t y . e x c e p t wher e m a n da t e d b y g ov e r n me n t re qu ireme n t s, t e s t i n g of all pa r a m et e r s of e a c h pr o du c t i s n ot ne c e s sa r i ly pe r f o r me d . n i t ron e x a s su me s n o l i a bi li t y f o r a pp l i c a tio ns a s si s t an c e o r c ust ome r pr o du c t desig n . cust ome r s a r e re s po n s i bl e f o r t hei r pr o du c t a n d a pp l i c a tio ns u s i n g n i tron e x semi c on du c t o r pr o du ct s o r se r vi c e s. t o m ini m i z e th e r i s k s a s so c i a t e d w i t h c ust ome r pr o du ct s a n d a pp l i c a- tio ns, c ust ome r s s ho u l d pr o vid e a de qua t e desig n a n d oper a t i n g s af eg u ar ds. n i t ron e x d o e s n ot w a r r a n t o r represe n t t hat a n y l i c e n s e , e i the r e xpre s s o r i mp l ie d , i s gr a nt e d u nde r a n y n i tron e x pa t e n t r ig h t , c o p y r ig h t , m ask w o r k r ig h t , o r o the r n i tron e x i nt e l le c tual prope r t y r ig h t re la t i n g to a n y c omb ina tio n , m a c hi n e o r pr o c e s s in w h i c h n i t ron e x pr o du ct s o r se r vi c e s a r e u se d . r epr o du c t i o n of inf o r m a tio n in n i tron e x da t a s he e t s i s pe r m i t t e d i f a n d o nly i f s a i d repr o du c tio n doe s n ot al t e r a n y of th e inf o r m a t i o n a n d i s a c c om pan ie d b y all a s s o c i a t e d w a r r a n tie s, c on di tio ns, li m i t a tio ns a n d n o ti c e s. a n y al t er a tio n of th e c o n t ai ne d inf o r m a tio n i nv al i da t e s all w a r r a n tie s a n d n i tron e x i s n ot re s po n s i bl e o r l i a bl e f o r a n y su c h s t a t eme n t s. n i t ron e x pr o du ct s a r e n ot i nt ende d o r au tho r i z e d f o r u s e in l i fe su ppo r t s ys t em s, in c l u di n g but n ot li m i t e d to su r g i c al i mp la n t s i n to t h e b o dy o r a n y o the r a pp l i c a tio n i nt ende d to su ppo r t o r sus t ain l i f e . sho u l d b u y e r p u r c ha s e o r u s e n i t ron e x, llc pr o du ct s f o r a n y su c h uni nt ende d o r unau tho r i z e d a pp l i c a tio n , b u y e r sh a ll i ndem n i f y a n d hol d n i tron e x, llc, i t s o f f i c e r s, empl oy ee s, su bsi d i a r ie s, a f f i l i a t e s, d i s t r ibut o r s, a n d i t s su cc e s so r s h a r mle s s a g ainst all c lai m s, c o s t s, da m a ge s, a n d e xpe n se s, a n d re a so na bl e a t t o r n e y f ee s a r is i n g o ut o f , d ire ct ly o r i n d ire ct l y , a n y c laim of pe r so nal inju r y o r de a t h a s so c i a t e d w i t h su c h uni nt ende d o r unau tho r i z e d u s e , n o t w i t hs t a n di n g i f su c h c laim al lege s t hat n i t ron e x w as neg l ige n t reg a r di n g th e desig n o r m an uf a c tu r e of s a i d pr o du ct s. n i t ron e x a n d t h e n i tron e x l o g o a r e re g i s t ere d tr a dema r k s of n i tron e x, llc . a ll o t he r pr o du c t o r se r vi c e na me s a r e th e prope r t y of thei r re s pe c ti v e o wne r s. ? n i t ron e x, llc 2 0 13 a ll r ig h t s rese r v e d .
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